To improve wear resistance and adhesion, a hard film of titanium carbide (TiC) is usually prepared by a plasma chemical vapor
deposition technique. Microwave sheath–voltage combination plasma (MVP) is a method to generate high–density plasma. In the present
study, TiC coatings were prepared by MVP and the processing conditions were examined to reveal the effect on film deposition speed. The
TiC coatings were deposited in a reactor using a TiCl4–CH4–H2–Ar gas mixture. The phase identifications, binding energy analysis, coating
composition, and friction coefficient were investigated by X–ray diffraction (XRD), X–ray photoelectron spectroscopy (XPS), energy dispersive
X–ray spectroscopy (EDX), and ball–on–disk friction tester, respectively. TiC was detected by XRD. As the flow rate of the raw material gas
increased, the film deposition rate increased. The maximum deposition rate of the films was 9.0 μm/h. By changing the film deposition
conditions, it is considered that higher speed film deposition of TiC will be possible.